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Transmission electron microscopy and x-ray diffraction investigation of the microstructure of nanoscale multilayer TiAlN/VN grown by unbalanced magnetron deposition

机译:透射电子显微镜和X射线衍射研究不平衡磁控管沉积生长的纳米多层TiAlN / VN的微观结构

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摘要

Cubic NaCl-B1 structured multilayer TiAlN/VN with a bi-layer thickness of approximately 3 nm and atomic ratios of (Ti+Al)/V = 0.98 to 1.15 and Ti/V = 0.55 to 0.61 were deposited by unbalanced magnetron sputtering at substrate bias voltages between -75 and -150 V. In this paper, detailed transmission electron microscopy and x-ray diffraction revealed pronounced microstructure changes depending on the bias. At the bias -75 V, TiAlN/VN followed a layer growth model led by a strong (110) texture to form a T-type structure in the Thornton structure model of thin films, which resulted in a rough growth front, dense columnar structure with inter-column voids, and low compressive stress of -3.8 GPa. At higher biases, the coatings showed a typical Type-II structure following the strain energy growth model, characterized by the columnar structure, void-free column boundaries, smooth surface, a predominant (111) texture, and high residual stresses between -8 and -11.5 GPa.
机译:通过不平衡磁控溅射在基板上沉积了立方纳米NaCl-B1结构的多层TiAlN / VN,其双层厚度约为3 nm,原子比为(Ti + Al)/ V = 0.98至1.15和Ti / V = 0.55至0.61偏置电压介于-75和-150 V之间。在本文中,详细的透射电子显微镜和X射线衍射显示出明显的微观结构变化,具体取决于偏置。在-75 V偏压下,TiAlN / VN遵循由强(110)织构引导的层生长模型,从而在薄膜的Thornton结构模型中形成T型结构,从而导致了粗糙的生长前沿,致密的柱状结构具有柱间空隙和-3.8 GPa的低压缩应力。在较高的偏压下,涂层表现出遵循应变能生长模型的典型II型结构,其特征在于柱状结构,无空隙的柱边界,光滑的表面,主要的(111)织构以及-8至-11.5 GPa。

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